“Weighted principal component analysis and its applications to improve FDC performance,” 2004 43rd IEEE Conference on Decision and Control (CDC) (IEEE Cat. No.04CH37601), Nassau, 2004, pp. 4262-4267 Vol.4.
“Feedforward of mask open measurements on an integrated scatterometer to improve gate linewidth control”, Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004);
Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. In: 2009 International Symposium on VLSI Technology, Systems, and Applications. IEEE, 2009. p. 22-23.
Influence of gas chemistry and ion energy on contact resistance. Japanese journal of applied physics, 1996, 35.4S: 2494.
High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate. Japanese Journal of Applied Physics, 2009, 48.4S: 04C055.
Fabrication of segmented-channel MOSFETs for reduced short-channel effects. In: 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. p. 1-2.
Fully strained Si0. 75Ge0. 25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices. Microelectronic Engineering, 2008, 85.8: 1804-1806.
300 mm oxide etching system and CUD. In: 2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No. 00TH8479). IEEE, 2000. p. 106-108.
Special Section on the International Symposium on Semiconductor Manufacturing. IEEE Transactions on Semiconductor Manufacturing, 2005, 18.4: 475-476.
